1 - 4 ? 2000 ixys all rights reserved v dss i d25 r ds(on) ixth 35n30 300 v 35 a 0.10 ? ? ? ? ? ixth 40n30 300 v 40 a 0.085 ? ? ? ? ? ixtm 40n30 300 v 40 a 0.088 ? ? ? ? ? symbol test conditions maximum ratings v dss t j = 25 c to 150 c 300 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 300 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c 35n30 35 a 40n30 40 a i dm t c = 25 c, pulse width limited by t jm 35n30 140 a 40n30 160 a p d t c = 25 c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque 1.13/10 nm/lb.in. weight to-204 = 18 g, to-247 = 6 g maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s to-247 ad (ixth) megamos tm fet n-channel enhancement mode to-204 ae (ixtm) g = gate, d = drain, s = source, tab = drain d g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 300 v v gs(th) v ds = v gs , i d = 250 a24v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = 0.8 ? v dss t j = 25 c 200 a v gs = 0 v t j = 125 c1ma r ds(on) v gs = 10 v, i d = 0.5 i d25 ixth35n30 0.10 ? IXTH40N30 0.085 ? ixtm40n30 0.088 ? pulse test, t 300 s, duty cycle d 2 % features l international standard packages l low r ds (on) hdmos tm process l rugged polysilicon gate cell structure l low package inductance (< 5 nh) - easy to drive and to protect l fast switching times applications l switch-mode and resonant-mode power supplies l motor controls l uninterruptible power supplies (ups) l dc choppers advantages l easy to mount with 1 screw (to-247) (isolated mounting screw hole) l space savings l high power density 91535e(5/96) d (tab) ixys reserves the right to change limits, test conditions, and dimensions.
2 - 4 ? 2000 ixys all rights reserved ixth 35n30 ixth 40n30 ixtm 40n30 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 22 25 s c iss 4600 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 650 pf c rss 240 pf t d(on) 24 30 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 40 90 ns t d(off) r g = 2 ?, (external) 75 100 ns t f 40 90 ns q g(on) 190 220 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 28 50 nc q gd 85 105 nc r thjc 0.42 k/w r thck 0.25 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 35n30 35 a 40n30 40 a i sm repetitive; 35n30 140 a pulse width limited by t jm 40n30 160 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = i s , -di/dt = 100 a/ s, v r = 100 v 400 ns dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc to-247 ad (ixth) outline dim. millimeter inches min. max. min. max. a 6.4 11.4 .250 .450 a1 1.53 3.42 .060 .135 ? b 1.45 1.60 .057 .063 ? d 22.22 .875 e 10.67 11.17 .420 .440 e1 5.21 5.71 .205 .225 l 11.18 12.19 .440 .480 ? p 3.84 4.19 .151 .165 ? p1 3.84 4.19 .151 .165 q 30.15 bsc 1.187 bsc r 12.58 13.33 .495 .525 r1 3.33 4.77 .131 .188 s 16.64 17.14 .655 .675 to-204ae (ixtm) outline terminals: 1 - gate 2 - drain 3 - source tab - drain pins 1 - gate 2 - source case - drain 1 2 3 ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
3 - 4 ? 2000 ixys all rights reserved ixth 35n30 ixth 40n30 ixtm 40n30 t j - degrees c -50 -25 0 25 50 75 100 125 150 bv/v g(th) - normalized 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 t c - degrees c -50 -25 0 25 50 75 100 125 150 i d - amperes 0 10 20 30 40 50 40n30 t j - degrees c -50 -25 0 25 50 75 100 125 150 r ds(on) - normalized 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 i d - amperes 0 20406080100120 r ds(on) - normalized 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v gs - volts 012345678910 i d - amperes 0 10 20 30 40 50 60 70 80 v ds - volts 02468101214 i d - amperes 0 10 20 30 40 50 60 70 80 6v 5v 35n30 8v 7v t j = 25 c v gs = 10v v gs = 15v bv dss v gs(th) v gs = 10v i d = 20a t j = 25 c t j = 25 c fig. 1 output characteristics fig. 2 input admittance fig. 3 r ds(on) vs. drain current fig. 4 temperature dependence of drain to source resistance fig. 5 drain current vs. fig. 6 temperature dependence of case temperature breakdown and threshold voltage
4 - 4 ? 2000 ixys all rights reserved ixth 35n30 ixth 40n30 ixtm 40n30 v ds - volts 110100 i d - amperes 1 10 100 gate charge - ncoulombs 0 25 50 75 100 125 150 175 200 v ge - volts 0 2 4 6 8 10 v sd - volts 0.00.20.40.60.81.01.21.41.6 i d - amperes 0 10 20 30 40 50 60 70 80 vds - volts 0 5 10 15 20 25 capacitance - pf 0 500 1000 1500 2000 2500 3000 3500 4000 4500 time - seconds 0.00001 0.0001 0.001 0.01 0.1 1 10 thermal response - k/w 0.001 0.01 0.1 1 d=0.5 d=0.2 d=0.1 d=0.05 d=0.02 d=0.01 c rss 300 10s 100s 1ms 10ms 100ms c oss limited by r ds(on) v ds = 150v i d = 21a i g = 10ma c iss single pulse t j = 125 c t j = 25 c f = 1 mhz v ds = 25v fig.7 gate charge characteristic curve fig.8 forward bias safe operating area fig.11 transient thermal impedance fig.9 capacitance curves fig.10 source current vs. source to drain voltage
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